IGBT/Power MOSFET TLP705

Product Description

TLP705 - Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive - Toshiba Semiconductor

DESCRIPTION

The TOSHIBA TLP705 consists of a GaAAs light emitting diode and a

integrated photodetector.

This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8PIN DIP

and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced.

TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705 is capable of direct gate drive of lowr Power IGBTs.

FEATURES

Peak output current : ±0.45 A (max)

Operating frequency : 250kHz (max)

Guaranteed performance over temperature : 40 to 100°C

Supply current : 3mA (max)

Power supply voltage : 10 to 20 V

Threshold input current : IFLH = 8 mA (max)

Switching time (tpLH / tpHL) : 200 ns (max)

Common mode transient immunity : 10 kV/μs

Isolation voltage : 5000 Vrms

UL Recognized :UL1577, File No.E67349